DESCRIPTION

KVR26N19S8/8 is a 1G x 64-bit (8GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx8, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. Each 288-pin DIMM uses gold contact fingers. 

FEATURES

• Power Supply: VDD=1.2V Typical

• VDDQ = 1.2V Typical

• VPP - 2.5V Typical

• VDDSPD=2.2V to 3.6V

• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

• Low-power auto self refresh (LPASR)

• Data bus inversion (DBI) for data bus

• On-die VREFDQ generation and calibration

• Single-rank

• On-board I2 serial presence-detect (SPD) EEPROM

• 16 internal banks; 4 groups of 4 banks each

• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)

• Selectable BC4 or BL8 on-the-fly (OTF)

• Fly-by topology

• Terminated control command and address bus

• PCB: Height 1.23” (31.25mm)

• RoHS Compliant and Halogen-Free

SPECIFICATIONS

CL(IDD) :- 19 cycles

 Row Cycle Time (tRCmin) :- 45.75ns(min.)

 Refresh to Active/Refresh Command Time (tRFCmin) :- 350ns(min.)

Row Active Time (tRASmin) :- 32ns(min.)

Maximum Operating Power :- TBD W*

UL Rating :- 94 V - 0

Operating Temperature :- 0^o C to +85^o C

Storage Temperature :- -55^o C to +100^o C